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LDTA123TWT1G

LRC
Part Number LDTA123TWT1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA123TWT1G PDF File

LDTA123TWT1G
LDTA123TWT1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTA123TWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA123TWT1G 6R 2.
2 3000/Tape & Reel LDTA123TWT3G 6R 2.
2 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min.
50 50 5 − − − 100 1.
54 − Typ.
− − − − − − 250 2.
2 250 Max.
− − − 0.
5 0.
5 0.
3 600 2.
86 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.
25mA IC=1mA , VCE=5V − VCB=10V , IE= −5mA , f=100MHz 1/3 zElectrical characteristic curves LESHAN RADIO COMPANY, LTD.
LDTA123TWT1G DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE...


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