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LDTA124TWT3G

LRC
Part Number LDTA124TWT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA124TWT3G PDF File

LDTA124TWT3G
LDTA124TWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Limits −50 −50 −5 Collector current IC −100 Collector power dissipation PC 150 Junction temperature Storage temperature Tj Tstg 150 −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA124TWT1G O6 22 3000/Tape & Reel LDTA124TWT3G O6 22 10000/Tape & Reel Unit V V V mA mW °C °C LDTA124TWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Input resistance R1 Transition frequency ∗ Characteristics of built-in transistor fT ∗ Min.
−50 −50 −5 − − − 100 15.
4 − Typ.
− − − − − − 250 22 250 Max.
− − − −0.
5 −0.
5 −0.
3 600 28.
6 − Unit V V V µA µA V − kΩ MHz Conditions IC=−50µA IC=−1mA IE=−50µA VCB=−50V VEB=−4V IC/IB=−5mA/−0.
5mA VCE=−5V, IC=−1mA − VCE=−10V, IE=5mA, f=100MHz 1/3 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic...


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