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IRF6709S2TRPbF

Part Number	IRF6709S2TRPbF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Aug 18, 2015
Detailed Description	l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Induct...
Datasheet	IRF6709S2TRPbF PDF File

Overview

l RoHS Compliant and Halogen Free l Low Profile (<0.
7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 5.
9mΩ@10V 10.
1mΩ@4.
5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.
1nC 2.
8nC 1.
1nC 9.
3nC 4.
6nC 1.
8V Applicable DirectFET Outline and Substrate Outline S1 DirectFET ISOMETRIC S1 S2 SB M2 M4 L4 L6 L8 Description The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses.
The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings Parameter Max.
Units VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContin...

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IRF6709S2TRPbF Power MOSFET - International Rectifier

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