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FQPF32N20C

Fairchild Semiconductor
Part Number FQPF32N20C
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Aug 18, 2015
Detailed Description FQP32N20C / FQPF32N20C — N-Channel QFET® MOSFET FQP32N20C / FQPF32N20C N-Channel QFET® MOSFET 200 V, 28 A, 82 mΩ Novem...
Datasheet PDF File FQPF32N20C PDF File

FQPF32N20C
FQPF32N20C

Overview
FQP32N20C / FQPF32N20C — N-Channel QFET® MOSFET FQP32N20C / FQPF32N20C N-Channel QFET® MOSFET 200 V, 28 A, 82 mΩ November 2013 Features • 28 A, 200 V, RDS(on) = 82 mΩ (Max.
) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ.
82.
5 nC) • Low Crss (Typ.
185 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D GDS TO-220 G GDS TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gat...


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