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LDTD114EWT1G

LRC
Part Number LDTD114EWT1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 18, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTD114EWT1G PDF File

LDTD114EWT1G
LDTD114EWT1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit LDTD114EWT1G S-LDTD114EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IC PD Tj Tstg 50 −10 to +40 500 200 150 −55 to +150 V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD114EWT1G S-LDTD114EWT1G LDTD114EWT3G S-LDTD114EWT3G Q5 Q5 10 10 3000/Tape & Reel 10 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency ∗ Characteristics of built-in transistor fT ∗ Min.
− 3 − − − 56 7 0.
8 − Typ.
− − 0.
1 − − − 10 1 200 Max.
0.
5 − 0.
3 0.
88 0.
5 − 13 1.
2 − Unit V V mA µA − kΩ − MHz Conditions VCC= 5V, IO= 100µA VO= 0.
3V, IO= 10mA IO/II= 50mA/2.
5mA VI= 5V VCC= 50V, VI=0V VO= 5V, IO= 50mA − − VCE=10V, IE= −50mA, f=100MHz Rev.
O 1/3 LESHAN RADIO COMPANY, LTD.
LDTD114EWT1G ;S-LDTD114EWT1G zElectrical ch...


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