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LDTB123EWT3G

LRC
Part Number LDTB123EWT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 18, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTB123EWT3G PDF File

LDTB123EWT3G
LDTB123EWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage Input voltage Output current VCC VIN IC −50 −12 to +10 −500 V V mA Power dissipation Junction temperature Storage temperature PD Tj Tstg 200 150 −55 to +150 mW C C LDTB123EWT1G S-LDTB123EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123EWT1G S-LDTB123EWT1G LDTB123EWT3G S-LDTB123EWT3G K5 K5 2.
2 2.
2 3000/Tape & Reel 2.
2 2.
2 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min.
− −3 − − − 39 1.
54 0.
8 − Typ.
− − −0.
1 − − − 2.
2 1 200 Max.
−0.
5 − −0.
3 −3.
8 −0.
5 2.
86 1.
2 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −20mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI=0V VO= −5V, IO= −50mA − − VCE= −10V, IE= 50mA, f= 100MHz Rev.
O 1/3 LESHAN RADIO COMPANY, LTD.
LDTB123EWT1G;S-LDTB123EWT1...


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