DatasheetsPDF.com

LDTB114GWT3G

LRC
Part Number LDTB114GWT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 18, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTB114GWT3G PDF File

LDTB114GWT3G
LDTB114GWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Each pin mounted on the recommended land Symbol VCBO VCEO VEBO IC Pd ∗ Tj Tstg Limits −50 −50 −5 −500 200 150 −55 to +150 Unit V V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114GWT1G S-LDTB114GWT1G LDTB114GWT3G S-LDTB114GWT3G K7 K7 10 3000/Tape & Reel 10 10000/Tape & Reel LDTB114GWT1G S-LDTB114GWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R2 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current BVCEO BVEBO ICBO Emitter cutoff curren IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Emitter-base resistance R2 Transition frequency fT ∗ ∗Characteristics of built-in transistor Min.
−50 −50 −5 − − − 56 7 − Typ.
− − − − − − − 10 200 Max.
− − − −0.
5 −580 −0.
3 − 13 − Unit V V V µA µA V − kΩ MHz Co...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)