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TD422BL

UNIKC
Part Number TD422BL
Manufacturer UNIKC
Description N-Channel Enhancement Mode MOSFET
Published Aug 18, 2015
Detailed Description TD422BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 76A TO-252 ABSOL...
Datasheet PDF File TD422BL PDF File

TD422BL
TD422BL

Overview
TD422BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 76A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 76 45 135 Avalanche Current IAS 35 Avalanche Energy L = 0.
1mH EAS 62 Power Dissipation TC = 25 °C TC = 100 °C PD 60 24 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.
15 °C / W Rev 1.
2 1 2015/1/9 TD422BL N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 30 1.
1 1.
7 2.
8 ±100 Zero Gate Voltage Drain Current On-State Drain Current1 IDSS ID(ON) VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 125 °C VDS = 10V, VGS = 10V 135 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.
5V, ID = 20A VGS = 10V, ID = 20A VDS = 5V, ID = 20A 7.
5 12 4.
3 6 44 DYNAMIC Input Capacitance Ciss 2400 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 245 Reverse Transfer Capacitance Crss 230 Gate Resistance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 0V, f = 1MHz VDS = 1.
5V, VGS = 10V ID = 20A VDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω 1 42 7 10 23 44 160 93 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Forward Voltage1 VSD IF = 20A, V...


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