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NVJD4401N

ON Semiconductor
Part Number NVJD4401N
Manufacturer ON Semiconductor
Description Small Signal MOSFET
Published Aug 20, 2015
Detailed Description NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 ...
Datasheet PDF File NVJD4401N PDF File

NVJD4401N
NVJD4401N


Overview
NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devices are Pb−Free and are RoHS Compliant Applications • Load Power Switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C t ≤10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, TSTG 20 ±12 0.
63 0.
46 0.
27 ...



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