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NVTFS4C06N

ON Semiconductor
Part Number NVTFS4C06N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 20, 2015
Detailed Description MOSFET – Power, Single, N-Channel, m8FL 30 V, 4.2 mW, 71 A NVTFS4C06N Features  Low RDS(on) to Minimize Conduction Lo...
Datasheet PDF File NVTFS4C06N PDF File

NVTFS4C06N
NVTFS4C06N

Overview
MOSFET – Power, Single, N-Channel, m8FL 30 V, 4.
2 mW, 71 A NVTFS4C06N Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  NVTFS4C06NWF − Wettable Flanks Product  NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady RqJA (Notes 1, 2, 4) State TA = 25C TA = 100C Power Dissipation RqJA (Note 1, 2, 4) TA = 25C TA = 100C Continuous Drain Current RqJC (Note 1, 3, 4) TA = 25C TA = 100C Power Dissipation RqJC (Note 1, 3, 4) TA = 25C TA = 100C Pulsed Drain Current TA = 25C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode...


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