DatasheetsPDF.com

NVD4809N

ON Semiconductor
Part Number NVD4809N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 20, 2015
Detailed Description NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction ...
Datasheet PDF File NVD4809N PDF File

NVD4809N
NVD4809N

Overview
NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4809N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C VDSS VGS ID PD ID PD ID 30 "20 13.
1 10.
1 2.
63 9.
6 7.
4 1.
4 58 45 V V A W A W A Power Dissipation (RqJC) (Note 1) TC = 25°C Pulsed Drain Current tp=10ms TA = 25°C Current Limited by Package TA = 25°C Operating Junction and Storage Temperature PD IDM IDmaxPkg TJ, Tstg 52 130 45 −55 to 175 W A A °C Source Current (Body Diode) Drain to Source dV/dt IS dV/dt 43 A 6.
0 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.
0 mH, IL(pk) = 13.
5 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 91.
0 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev.
14 1 http://onsemi.
com V(BR)DSS 30 V RDS(on) MAX 9.
0 mW @ 10 V 14 mW @ 4.
5 V D ID MAX 58 A N−Channel G S 4 4 4 12 3 DPAK CASE 369AA (Bent Lead) STYLE 2 1 23 1 2 3 IPAK IPAK CASE 369AD CASE 369D (Straight Lead) (Straight Lead STYLE 2 DPAK) STYLE 2 4 Drain MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain AYWW...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)