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C2632

Panasonic Semiconductor
Part Number C2632
Manufacturer Panasonic Semiconductor
Description 2SC2632
Published Aug 20, 2015
Detailed Description Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complement...
Datasheet PDF File C2632 PDF File

C2632
C2632

Overview
Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 5.
9±0.
2 Unit: mm 4.
9±0.
2 8.
6±0.
2 ■ Features • Satisfactory linearity of forward current transfer ratio hFE 13.
5±0.
5 0.
7–+00.
.
23 • High collector-emitter voltage (Base open) VCEO 0.
7±0.
1 • Small collector output capacitance (Common base, input open cir- cuited) Cob / ■ Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 150 V n d ge.
ed Collector-emitter voltage (Base open) VCEO 150 (3.
2) V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 50 mA life d, d Peak collector current ICP 100 mA n u duct type Collector power dissipation PC 1 W te tin Pro ued Junction temperature Tj 150 °C four ntin Storage temperature Tstg −55 to +150 °C 0.
45+–00.
.
12 0.
45+–00.
.
12 (1.
27) (1.
27) 1: Emitter 123 2: Collector 3: Base 2.
54±0.
15 EIAJ: SC-51 TO-92L-A1 Package in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 150 V tinu nan Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V M is iscon ainte Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 1 µA e/D e, m Forward current transfer ratio * hFE VCE = 5 V, IC = 10 mA 130 330  D anc typ Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V inten ance Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 160 MHz Ma ten Collector output capacitance ain (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 3 pF (planed m Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 150 300 mV Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7...


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