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NVD20N03L27

ON Semiconductor
Part Number NVD20N03L27
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 21, 2015
Detailed Description NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a genera...
Datasheet PDF File NVD20N03L27 PDF File

NVD20N03L27
NVD20N03L27

Overview
NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package.
Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatures • High Avalanche Energy Specified • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Inductive Loads • PWM Motor Controls • Replaces MTD20N03L in many Applications MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25_C − Continuous @ TA = 100_C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25_C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1) Operating and Storage Temperature Range VDSS VDGR VGS VGS 30 30 ±20 ±24 Vdc Vdc Vdc ID IDIDM PD TJ, Tstg 20 16 60 74 0.
6 1.
75 −55 to 150 Adc Apk W W/°CW °C Single Pulse Drain−to−Source Avalanche EAS 288 mJ Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.
0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RRRqqqJJJCAA TL °C/W 1.
67 100 71.
4 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionali...


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