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NTB5860N

ON Semiconductor
Part Number NTB5860N
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Aug 21, 2015
Detailed Description NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capabili...
Datasheet PDF File NTB5860N PDF File

NTB5860N
NTB5860N

Overview
NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.
0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current, RqJC Steady State TC = 25°C TC = 100°C Power Dissipation, RqJC Steady State TC = 25°C Pulsed Drain Current tp = 10 ms Current Limited by Package Operating and Storage Temperature Range VDSS VGS ID PD IDM IDMmax TJ, Tstg 60 $20 220 156 283 660 130 −55 to +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.
3 mH) IS 130 EAS 735 Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 Unit V V A W A A °C ...


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