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LDTA115TLT1G

Leshan Radio Company
Part Number LDTA115TLT1G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 21, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA115TLT1G PDF File

LDTA115TLT1G
LDTA115TLT1G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Limits −50 −50 −5 Collector current IC −100 Collector Power dissipation Junction temperature PC 200 Tj 150 Storage temperature Tstg −55 to +150 Unit V V V mA mW °C °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA115TLT1G A6U 100 - 3000/Tape & Reel LDTA115TLT3G A6U 100 - 10000/Tape & Reel LDTA115TLT1G 3 1 2 SOT–23 1 BASE R1 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage BVCEO BVEBO Collector cutoff current ICBO Emitter cutoff current Collector-emitter saturation voltage IEBO VCE(sat) DC current transfer ratio hFE Input resistance R1 Transition frequency fT ∗ ∗Characteristics of built-in transistor Min.
Typ.
Max.
Unit Conditions −50 − − V IC= −50µA −50 − − V IC= −1mA −5 − − V IE= −50µA − − −0.
5 µA VCB= −50V − − −0.
5 µA VEB= −4V − − −0.
3 V IC/IB= −1mA/−0.
1mA 100 250 600 − IC= −1mA , VCE= −5V 70 100 130 kΩ − − 250 − MHZ VCE= −10V , IE=5mA , f=100MHZ 1/3 LESHAN RADIO COMPANY, LTD.
LDTA115TLT1G DC CURRENT GAIN : hFE CORRECTOR SA...


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