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NVD6820NL

ON Semiconductor
Part Number NVD6820NL
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 22, 2015
Detailed Description NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • High...
Datasheet PDF File NVD6820NL PDF File

NVD6820NL
NVD6820NL

Overview
NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current 2 & 3) RqJA (Notes 1, Power (Notes Dissipation 1 & 2) RqJA Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 90 "20 50 35 100 50 10 7.
0 4.
0 2.
0 310 −55 to 175 V V A W A W A °C Source Current (Body Diode) IS 50 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 31 A, L = 0.
3 mH, RG = 25 W) EAS 144 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) RqJC 1.
5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 38 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Continuous DC current rating.
Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.
com V(BR)DSS 90 V RDS(on) ...


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