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NVD6414AN

ON Semiconductor
Part Number NVD6414AN
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Aug 22, 2015
Detailed Description NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • Low RDS(on) • High Current Capability • 100% ...
Datasheet PDF File NVD6414AN PDF File

NVD6414AN
NVD6414AN

Overview
NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range VDSS VGS ID PD IDM TJ, Tstg 100 ±20 32 22 100 117 −55 to +175 V V A W A °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 32 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 32 A EAS 154 mJ TL 260 °C Stresses exceed...


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