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NVD6416AN

ON Semiconductor
Part Number NVD6416AN
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Aug 22, 2015
Detailed Description NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features • Low RDS(on) • High Current Capability • 100% ...
Datasheet PDF File NVD6416AN PDF File

NVD6416AN
NVD6416AN

Overview
NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS ±20 V Continuous Drain Current Steady State TC = 25°C TC = 100°C ID 17 A 11 Power Dissipation Steady TC = 25°C State PD 71 W Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range IDM TJ, Tstg 62 −55 to +175 A °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 17 A EAS 43 mJ TL 260 °C Stresses exceeding...


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