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FDB8444_F085

Fairchild Semiconductor
Part Number FDB8444_F085
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 22, 2015
Detailed Description FDB8444_F085 N-Channel PowerTrench® MOSFET MPLEMENTATION October 2010 FDB8444_F085 N-Channel PowerTrench® MOSFET 40V,...
Datasheet PDF File FDB8444_F085 PDF File

FDB8444_F085
FDB8444_F085

Overview
FDB8444_F085 N-Channel PowerTrench® MOSFET MPLEMENTATION October 2010 FDB8444_F085 N-Channel PowerTrench® MOSFET 40V, 70A, 5.
5mΩ Features „ Typ rDS(on) = 3.
9mΩ at VGS = 10V, ID = 70A „ Typ Qg(TOT) = 91nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems AD FREE I LE GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) D G S ©2010 Fairchild Semiconductor Corporation FDB8444_F085 Rev C (W) 1 www.
fairchildsemi.
com FDB8444_F085 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (VGS = 10V) (Note 1) EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC (Note 2) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 copper pad area Ratings 40 ± 20 70 Figure 4 307 167 1.
1 -55 to +175 0.
9 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB8444 FDB8444_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V VGS = 0V TJ =150°C VGS = ±20V 40 - - -V - 1 μA - 250 μA - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance VDS = VGS, ID = 250μA ID = 70A, VGS = 10...


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