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NCV8440A

ON Semiconductor
Part Number NCV8440A
Manufacturer ON Semiconductor
Description Protected Power MOSFET
Published Aug 24, 2015
Detailed Description NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features ...
Datasheet PDF File NCV8440A PDF File

NCV8440A
NCV8440A

Overview
NCV8440, NCV8440A Protected Power MOSFET 2.
6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Applications • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.
onsemi.
com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.
6 A Drain (Pins 2, 4) Gate (Pin 1) Overvoltage Protection ESD Protection Source (Pin 3) MARKING DIAGRAM DRAIN SOT−223 CASE 318E STYLE 3 1 = Gate 2 = Drain 3 = Source 4 AYW xxxxx G G 1 23 GATE SOURCE DRAIN A Y W xxxxx G = Assembly Location = Year = Work Week = V8440 or 8440A = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 1 October, 2018 − Rev.
8 Publication Order Number: NCV8440/D NCV8440, NCV8440A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.
17 A, VGS = 10 V, L = 160 mH, RG = 25 W) VDSS VGS ID IDM PD TJ, Tstg EAS 52−59 V ±15 V 2.
6 A 10 1.
69 W −55 to 150 °C 110 mJ Load Dump Voltage (VGS = 0 and 10 V, RI = 2.
0 W, RL = 9.
0 W, td = 400 ms) Thermal Resistance, Junct...


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