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NGB8202NT4G

ON Semiconductor
Part Number NGB8202NT4G
Manufacturer ON Semiconductor
Description Ignition IGBT
Published Aug 24, 2015
Detailed Description NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT...
Datasheet PDF File NGB8202NT4G PDF File

NGB8202NT4G
NGB8202NT4G

Overview
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • These are Pb−Free Devices Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t≤2 ms, f≤100 Hz) ESD (Charged−Device Model) VCES VCER VGE IC IG IG ESD 440 440 "15 20 50 1.
0 20 2.
0 V V V ADC AAC mA mA kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD kV 8.
0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 150 W 1.
0 W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev.
7 1 http://onsemi.
com 20 AMPS, 400 VOLTS VCE(on) = 1.
3 V @ IC = 10 A, VGE .
4.
5 V C G RG RGE E D2PAK CASE 418B STYLE 4 1 MARKING DIAGRAM 4 Collector GB 8202xxG AYWW 13 Gate 2 Emitter Collector GB8202xx = Device Code xx ...


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