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NGB8207BN

ON Semiconductor
Part Number NGB8207BN
Manufacturer ON Semiconductor
Description Ignition IGBT
Published Aug 24, 2015
Detailed Description NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGB...
Datasheet PDF File NGB8207BN PDF File

NGB8207BN
NGB8207BN

Overview
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Minimum Avalanche Energy − 500 mJ • Gate Resistor (RG) = 70 W • These are Pb−Free Devices Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model) VCES VGE IC IG IG ESD 365 $15 20 50 1.
0 20 2.
0 V V AADACC mA mA kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD kV 8.
0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Total Power Dissipation @ TC = 25°C Derate above 25°C (Note 1) PD 165 W 1.
1 W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Assuming infinite heatsink Case−to−Ambient © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev.
1 1 http://onsemi.
com 20 AMPS, 365 VOLTS VCE(on) = 1.
5 V Typ @ IC = 10 A, VGE .
4.
5 V C G RG RGE E D2PAK CASE 418B STYLE 4 1 MARK...


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