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LDTA144GLT1G

Leshan Radio Company
Part Number LDTA144GLT1G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 25, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA144GLT1G PDF File

LDTA144GLT1G
LDTA144GLT1G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits −50 −50 −5 −100 200 150 −55 to +150 Unit V V V mA mW C C LDTA144GLT1G 3 1 2 SOT-23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA144GLT1G Q3 47 3000/Tape & Reel LDTA144GLT3G Q3 47 10000/Tape & Reel zElectrical characteristics (T 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R2 fT Min.
−50 −50 −5 − −65 − 68 32.
9 − Typ.
− − − − − − − 47 250 Max.
− − − −0.
5 −130 −0.
3 − 61.
1 − Unit V V V µA µA V − kΩ MHz Conditions IC= −50µA IC= −1mA IE= −160µA VCB= −50V VEB= −4V IC= −10mA , IB= −0.
5mA IC= −5mA , VCE= −5V − VCE= −10V , IE=5mA , f=100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD.
LDTA144GLT1G zElectrical characteristic curves DC CURRENT GAIN : hFE COLLECTOR SATU...


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