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LDTD114GLT3G

Leshan Radio Company
Part Number LDTD114GLT3G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 25, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTD114GLT3G PDF File

LDTD114GLT3G
LDTD114GLT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 500 200 150 −55 to +150 Unit V V V mA mW C C LDTD114GLT1G S-LDTD114GLT1G 3 1 2 SOT-23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD114GLT1G S-LDTD114GLT1G LDTD114GLT3G S-LDTD114GLT3G E7 E7 _ 10 3000/Tape & Reel _ 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in transistor.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R2 fT ∗ Min.
50 50 5 − 300 − 56 7 − Typ.
− − − − − − − 10 200 Max.
− − − 0.
5 580 0.
3 − 13 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=720µA VCB=50V VEB=4V IC/IB=50mA / 2.
5mA IC=50mA...


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