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LDTB143TLT3G

Part Number	LDTB143TLT3G
Manufacturer	Leshan Radio Company
Description	Bias Resistor Transistor
Published	Aug 25, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet	LDTB143TLT3G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −40 −5 −500 200 150 −55 to +150 Unit V V V mA mW C C LDTB143TLT1G S-LDTB143TLT1G 3 1 2 SOT-23 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB143TLT1G S-LDTB143TLT1G LDTB143TLT3G S-LDTB143TLT3G K2 K2 4.
7 4.
7 3000/Tape & Reel 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Collector cutoff current ICBO − − −0.
5 µA VCB= −50V Emitter cutoff current IEBO − − −0.
5 µA VEB= −4V Collector-emitter saturation voltage VCE(sat) − − −0.
3 V IC/IB= −50mA/−2.
5mA DC current transfer ratio hFE 100 250 600 − VCE= −5V, IC= −50mA Input resistance R1 3.
29 4.
7 6.
11 kΩ − Transition frequency ∗ Charact...

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