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LDTDG12GPLT3G

Leshan Radio Company
Part Number LDTDG12GPLT3G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 25, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTDG12GPLT3G PDF File

LDTDG12GPLT3G
LDTDG12GPLT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver zFeatures 1) High hFE.
300 (Min.
) (VCE / IC=2V / 0.
5A) 2) Low saturation voltage, (VCE(sat)=0.
4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with RoHS requirements.
zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Coll...


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