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NRVBAF260T3G

ON Semiconductor
Part Number NRVBAF260T3G
Manufacturer ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Published Aug 26, 2015
Detailed Description MBRAF260T3G, NRVBAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in ...
Datasheet PDF File NRVBAF260T3G PDF File

NRVBAF260T3G
NRVBAF260T3G

Overview
MBRAF260T3G, NRVBAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features • Low Profile Package for Space Constrained Applications • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • 150°C Operating Junction Temperature • Guard−Ring for Stress Protection •...


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