DatasheetsPDF.com

IRF6645PBF

Part Number	IRF6645PBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Aug 26, 2015
Detailed Description	IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Spe...
Datasheet	IRF6645PBF PDF File

Overview

IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.
7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) 100V max ±20V max 28mΩ@ 10V Qg tot Qgd Vgs(th) 14nC 4.
8nC 4.
0V Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SJ DirectFET ISOMETRIC SH SJ SP MZ MN Description The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies.
The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings Parameter Max.
Units VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gat...

Similar Datasheet

IRF6645PBF Power MOSFET - International Rectifier

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)