DatasheetsPDF.com

30N60B3D

Fairchild Semiconductor
Part Number 30N60B3D
Manufacturer Fairchild Semiconductor
Description HGTG30N60B3D
Published Aug 26, 2015
Detailed Description Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30...
Datasheet PDF File 30N60B3D PDF File

30N60B3D
30N60B3D

Overview
Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49170.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60B3D TO-247 G30N60B3D NOTE: When ordering, use the entire part number.
Packaging JEDEC STYLE TO-247 E C G Symbol C G E Features • 60A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
90ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev.
B2 HGTG30N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)