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ZXTNS618MC

Part Number	ZXTNS618MC
Manufacturer	Diodes
Description	20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
Published	Aug 26, 2015
Detailed Description	OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHO...
Datasheet	ZXTNS618MC PDF File

Overview

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits NPN Transistor  BVCEO > 20V  IC = 4.
5A Continuous Collector Current  Low Saturation Voltage (150mV Max @ 1A)  RSAT = 47mΩ for a Low Equivalent On-Resistance  hFE Characterized up to 6A for High Current Gain Hold up Schottky Diode  BVR > 40V  IFAV = 3A Average Peak Forward Current  Low VF < 500mV (@ 1A) for Reduced Power Loss  Fast Switching due to Schottky Barrier  Low Profile 0.
8mm High Package for Thin Applications  RθJA Efficient, 40% Lower than SOT26  6mm2 Footprint, 50% Smaller than TSOP6 and SOT26  Totally Lea...

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