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FSL13A0R

Intersil Corporation
Part Number FSL13A0R
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description FSL13A0D, FSL13A0R Data Sheet June 1999 File Number 4480.2 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Pow...
Datasheet PDF File FSL13A0R PDF File

FSL13A0R
FSL13A0R

Overview
FSL13A0D, FSL13A0R Data Sheet June 1999 File Number 4480.
2 9A, 100V, 0.
180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be radiation tolerant.
The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500.
Contact Intersil for any desired deviations from the data sheet.
Features • 9A, 100V, rDS(ON) = 0.
180Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.
5nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifi...


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