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IRF3710ZSPbF

International Rectifier
Part Number IRF3710ZSPbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 27, 2015
Detailed Description PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating T...
Datasheet PDF File IRF3710ZSPbF PDF File

IRF3710ZSPbF
IRF3710ZSPbF

Overview
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB D2Pak TO-262 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) c Pulsed Drain Current Maxim...


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