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NP89N04PUK

Renesas
Part Number NP89N04PUK
Manufacturer Renesas
Description MOSFET
Published Aug 27, 2015
Detailed Description NP89N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0562EJ0200 Rev.2.00 May 24, 2018 Description The NP...
Datasheet PDF File NP89N04PUK PDF File

NP89N04PUK
NP89N04PUK


Overview
NP89N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0562EJ0200 Rev.
2.
00 May 24, 2018 Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 2.
95 m MAX.
(VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
Lead Plating Packing NP89N04PUK-E1-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) NP89N04PUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 20 90 360 147 1.
8 175 –55 to 175 37 136 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 1.
02 83.
3 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V *3 Not subject of production test.
Verified by design/characterization.
R07DS0562EJ0200 Rev.
2.
00 May 24, 2018 Page 1 of 6 NP89N04PUK Electrical Characteristics (TA = 25°C) Item Symbol MIN.
TYP.
MAX.
Zero Gate Voltage Drain Current IDSS — — 1 Gate Leakage Current IGSS — — 100 Gate to Source Threshold Voltage VGS(th) 2.
0 3.
0 4.
0 Forward Transfer Admittance *1 | yfs | 30 60 — Drain to Source On-state Resistance *1 RDS(on) — 2.
45 2.
95 Input Capacitance *2 Ciss — 3900 5850 Output Capacitance *2 Coss — 530 800 Reverse Transfer Capacitance *2 Crss — 200 ...


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