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RJK2555DPA

Part Number	RJK2555DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET
Published	Aug 27, 2015
Detailed Description	RJK2555DPA Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High...
Datasheet	RJK2555DPA PDF File

Overview

RJK2555DPA Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.
2.
00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 17 34 17 34 7 3.
0 30 4.
17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1776-0200 Rev.
2.
00 Apr 09, 2009 Pag...

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RJK2555DPA Silicon N Channel MOS FET - Renesas Technology

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