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LMUN5235DW1T1G

Leshan Radio Company
Part Number LMUN5235DW1T1G
Manufacturer Leshan Radio Company
Description Dual Bias ResistorTransistors
Published Aug 28, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Res...
Datasheet PDF File LMUN5235DW1T1G PDF File

LMUN5235DW1T1G
LMUN5235DW1T1G

Overview
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G Series 6 5 4 1 2 3 SC-88/SOT-363 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.
) mW 256 (Note 2.
) 1.
5 (Note 1.
) mW/°C 2.
0 (Note 2.
) Thermal Resistance – R θJA 670 (Note 1.
) °C/W Junction-to-Ambient 490 (Note 2.
) Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead PD R θJA R θJL 250 (Note 1.
) 385 (Note 2.
) 2.
0 (Note 1.
) 3.
0 (Note 2.
) 493 (Note 1.
) 325 (Note 2.
) 188 (Note 1.
) 208 (Note 2.
) Junction and Storage Temperature T J , T stg –55 to +150 1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 x 1.
0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 7X 1 23 7X = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking inf...


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