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AUIRFSL4410Z

International Rectifier
Part Number AUIRFSL4410Z
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 29, 2015
Detailed Description AUTOMOTIVE GRADE PD - 96405A AUIRFS4410Z Features AUIRFSL4410Z l Advanced Process Technology l Ultra Low On-Resistan...
Datasheet PDF File AUIRFSL4410Z PDF File

AUIRFSL4410Z
AUIRFSL4410Z


Overview
AUTOMOTIVE GRADE PD - 96405A AUIRFS4410Z Features AUIRFSL4410Z l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description HEXFET® Power MOSFET D VDSS RDS(on) typ.
100V 7.
2mΩ G max.
9.
0mΩ S ID 97A Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D DS G D2Pak AUIRFS4410Z DS G TO-262 AUIRFSL4410Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt EAS (Thermally limited) IAR EAR TJ TSTG Gate-to-Source Voltage ePeak Diode Recovery dSingle Pulse Avalanche Energy Avalanche Current fRepetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Thermal Resistance Param...


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