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FSL23A4R

Intersil Corporation
Part Number FSL23A4R
Manufacturer Intersil Corporation
Description 5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSL23A4D, FSL23A4R June 1998 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Dis...
Datasheet PDF File FSL23A4R PDF File

FSL23A4R
FSL23A4R

Overview
FSL23A4D, FSL23A4R June 1998 5A, 250V, 0.
480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be ...


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