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FDMS2508SDC

Fairchild Semiconductor
Part Number FDMS2508SDC
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFET
Published Aug 30, 2015
Detailed Description FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V,...
Datasheet PDF File FDMS2508SDC PDF File

FDMS2508SDC
FDMS2508SDC


Overview
FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 1.
95 mΩ July 2013 Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.
95 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.
85 mΩ at VGS = 4.
5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
This device has the added benefit of an efficient monolithic Schottky body diode.
Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 S S S G D5 D6 4G 3S D D D D Top Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS dv/dt PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 4) (Note 1a) (Note 3) (Note 5) (Note 1a) 2S 1S Ratings 25 ±20 49 163 34 200 144 1.
9 78 3.
3 -55 to +150 Units V V A mJ V/ns W °C RθJC RθJC RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Info...



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