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Si7190DP

Part Number	Si7190DP
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Aug 31, 2015
Detailed Description	New Product N-Channel 250-V (D-S) MOSFET Si7190DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 250 0.118 at...
Datasheet	Si7190DP PDF File

Overview

New Product N-Channel 250-V (D-S) MOSFET Si7190DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 250 0.
118 at VGS = 10 V 0.
124 at VGS = 6 V PowerPAK SO-8 ID (A)g 18.
4 18.
0 Qg (Typ.
) 32 6.
15 mm S 1S 5.
15 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7190DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • Industrial • POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (...

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Si7190DP N-Channel MOSFET - Vishay

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