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IXFV22N60P

IXYS
Part Number IXFV22N60P
Manufacturer IXYS
Description Power MOSFETs
Published Aug 31, 2015
Detailed Description PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60...
Datasheet PDF File IXFV22N60P PDF File

IXFV22N60P
IXFV22N60P

Overview
PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS(on) ≤ 350 m Ω trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Tranisent TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) TO-247 PLUS220 & PLUS220SMD TO-247 (IXFH) Maximum Ratings 600 V 600 V ±30 ±40 V V GDS 22 A 66 A PLUS220 (IXFV) 22 A 40 mJ 1.
0 J 20 V/ns GDS D (TAB) D (TAB) 400 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
11.
.
65/2.
5.
.
15 Nm/lb.
6g 4g PLUS220SMD (IXFV.
.
.
S) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
600 V VGS(th) VDS = VGS, ID = 4 mA 3.
0 5.
5 V IGSS VGS = ±30 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 350 m Ω Features l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99315E(03/06) IXFH 22N60P IXFV22N60P IXFV 22N60PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
VDS = 20 V; ID = 0.
5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.
5 VDSS, ID = ID25 RG = 4 Ω (External) VGS = 10 V, VDS = 0.
5 V...


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