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10N120BND

Fairchild Semiconductor
Part Number 10N120BND
Manufacturer Fairchild Semiconductor
Description HGTG10N120BND
Published Sep 2, 2015
Detailed Description Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HG...
Datasheet PDF File 10N120BND PDF File

10N120BND
10N120BND

Overview
Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT used is the development type TA49290.
The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49302.
Ordering Information PART NUMBER PACKAGE BRAND HGTG10N120BND TO-247 10N120BND NOTE: When ordering, use the entire part number.
Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time .
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140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev.
B HGTG10N120BND Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage .
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BVCES Collector Current Continuous At ...


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