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CEM6088

Chino-Excel Technology
Part Number CEM6088
Manufacturer Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS...
Datasheet PDF File CEM6088 PDF File

CEM6088
CEM6088

Overview
CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.
5A, RDS(ON) = 12.
5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 9.
5 IDM 38 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA 62.
5 Units V V A A W C C/W This is preliminary information on a new product in development now .
Specification and data are subject to change without notice .
1 Rev 1.
2011.
Dec http://www.
cet-mos.
com Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5.
0A Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 48V, ID = 4.
5A, VGS = 10V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V, ID = 4.
5A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS =...


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