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CEM6188

Chino-Excel Technology
Part Number CEM6188
Manufacturer Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 7.3A, RDS(ON) = 26mΩ @VGS =...
Datasheet PDF File CEM6188 PDF File

CEM6188
CEM6188

Overview
CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 7.
3A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 35mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7.
3 IDM 29.
2 Maximum Power Dissipation PD 2 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2011.
Mar http://www.
cet-mos.
com CEM6188 Electrical Characteristics TA = 25 C unless...


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