DatasheetsPDF.com

CEM6600

Chino-Excel Technology
Part Number CEM6600
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ...
Datasheet PDF File CEM6600 PDF File

CEM6600
CEM6600

Overview
CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V.
RDS(ON) = 100mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 4 IDM 15 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 1.
2010.
Feb http://www.
cet-mos.
com Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Ga...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)