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CEM6200

Chino-Excel Technology
Part Number CEM6200
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V...
Datasheet PDF File CEM6200 PDF File

CEM6200
CEM6200

Overview
CEM6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 2.
6A, RDS(ON) = 230mΩ @VGS = 10V.
RDS(ON) = 270mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 2.
6 IDM 10.
4 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2007.
March http://www.
cetsemi.
com CEM6200 Electrical Characteristics Tc = 25 C unless otherwi...


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