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K4S561632E-NC75

Part Number	K4S561632E-NC75
Manufacturer	Samsung semiconductor
Description	SDRAM 256Mb E-die
Published	Sep 3, 2015
Detailed Description	SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 *...
Datasheet	K4S561632E-NC75 PDF File

Overview

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.
0 August.
2003 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.
0 (August.
2003) - First release.
CMOS SDRAM Rev.
1.
0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (8K Cycle) GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S...

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