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NPT1015B

MA-COM
Part Number NPT1015B
Manufacturer MA-COM
Description GaN Wideband Transistor
Published Sep 4, 2015
Detailed Description NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for line...
Datasheet PDF File NPT1015B PDF File

NPT1015B
NPT1015B

Overview
NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.
5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.
5 GHz  28 V Operation  12 dB Gain @ 2.
5 GHz  54 % Drain Efficiency @ 2.
5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.
5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.
5 dBm) in an industry standard metal-ceramic package with bolt down flange.
The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Ordering Information Part Number NPT1015B NPT1015B-SMBPPR Package bulk quantity sample Functional Schematic Rev.
V2 RFIN / VG 1 3 Flange 2 RFOUT / VD Pin Configuration Pin No.
Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange1 Ground / Source 1.
The Flange must be connected to RF and DC ground.
This path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1 M/A-COM Technology Solutions Inc.
(MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.
macom.
com for additional data sheets and product information.
For further information and support please visit: https://www.
macom.
com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.
5 GHz Rev.
V2 RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 400 mA Parameter Test Conditions Symbol Min.
Typ.
Max.
Units Small Signal Gain CW, 2.
5 GHz GSS - 13.
5 - dB Saturated Output Power CW, 2.
5 GHz PSAT - 47.
3 - dBm Drain Efficiency at Saturation Power Gain CW, 2.
5 GH...


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