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D78F0525

NEC
Part Number D78F0525
Manufacturer NEC
Description UPD78F0525
Published Sep 9, 2015
Detailed Description Preliminary User’s Manual 78K0/KD2 8-Bit Single-Chip Microcontrollers µPD78F0521 µPD78F0522 µPD78F0523 µPD78F0524 µPD7...
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D78F0525
D78F0525

Overview
Preliminary User’s Manual 78K0/KD2 8-Bit Single-Chip Microcontrollers µPD78F0521 µPD78F0522 µPD78F0523 µPD78F0524 µPD78F0525 µPD78F0526 µPD78F0527 µPD78F0527D The µPD78F0527D has an on-chip debug function.
Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function has been used, due to issues with respect to the number of times the flash memory can be rewritten.
NEC Electronics does not accept complaints concerning this product.
Document No.
U17312EJ2V1UD00 (2nd edition) Date Published August 2005 NS CP(K) Printed in Japan 2005 Free Datasheet http://www.
Datasheet4U.
com [MEMO] 2 Preliminary User’s Manual U17312EJ2V1UD Free Datasheet http://www.
Datasheet4U.
com NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction.
If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc.
, the device may malfunction.
Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN).
2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction.
If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.
, causing malfunction.
CMOS devices behave differently than Bipolar or NMOS devices.
Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry.
Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin.
All handling related to unused pins must be judged separately for each device and according to related specifications governing the device.
3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultim...


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