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IRLTS6342PbF

International Rectifier
Part Number IRLTS6342PbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Sep 10, 2015
Detailed Description VDS VGS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 30 ±12 17.5 22.0 11 8.3 V V m...
Datasheet PDF File IRLTS6342PbF PDF File

IRLTS6342PbF
IRLTS6342PbF


Overview
VDS VGS RDS(on) max (@VGS = 4.
5V) RDS(on) max (@VGS = 2.
5V) Qg (typical) ID (@TA = 25°C) 30 ±12 17.
5 22.
0 11 8.
3 V V mΩ mΩ nC A PD - 97730 IRLTS6342PbF HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Applications • System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability Orderable part number IRLTS6342TRPBF Package Type TSOP-6 Standard Pack Form Quantity Tape and Reel 3000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 4.
5V ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current, VGS @ 4.
5V cPulsed Drain Current ePower Dissipation ePower Dissipation Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Max.
30 ±12 8.
3 6.
7 64 2.
0 1.
3 0.
02 -55 to + 150 Units V A W W/°C °C Notes  through „ are on page 2 www.
irf.
com 1 9/27/11 IRLTS6342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance 30 ––– ––– ––– VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 0.
5 ––– ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– gfs Forward Transconductance 25 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Parameter Min.
IS Continuous Source Current (Body Diode) ––– ÙISM Pulsed So...



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