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NSV1C201MZ4

Part Number	NSV1C201MZ4
Manufacturer	ON Semiconductor
Description	NPN Transistor
Published	Sep 10, 2015
Detailed Description	NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat...
Datasheet	NSV1C201MZ4 PDF File

Overview

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.
0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives.
In the automotive industry they can be used in air bag deployment and in the instrument cluster.
The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS VCEO VCBO VEBO IC ICM 100 Vdc 140 Vdc 7.
0 Vdc 2.
0 A 3.
0 A Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 800 mW 6.
5 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 155 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 2.
0 W 15.
6 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 64 °C/W Total Device Dissipation (Single Pulse < 10 sec.
) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maxi...

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